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BDP947, BDP949, BDP953
Silicon NPN Transistors * For AF driver and output stages * High collector current * High current gain * Low collector-emitter saturation voltage * Complementary types: BDP948, BDP950, BDP954 (PNP) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101
4 2 1
3
Type BDP947 BDP949 BDP953
Marking BDP947 1=B BDP949 1=B BDP953 1=B 2=C 2=C 2=C
Pin Configuration 3=E 3=E 3=E 4=C 4=C 4=C -
Package SOT223 SOT223 SOT223
1
2009-05-28
BDP947, BDP949, BDP953
Maximum Ratings Parameter Collector-emitter voltage BDP947 BDP949 BDP953 Collector-base voltage BDP947 BDP949 BDP953 Emitter-base voltage Collector current Peak collector current, tp 10 ms Base current Peak base current, tp 10 ms Total power dissipationTS 100 C Junction temperature Storage temperature
1Pb-containing
Symbol VCEO
Value 45 60 100
Unit V
VCBO 45 60 120 VEBO IC ICM IB IBM Ptot Tj Tstg 5 3 5 200 500 5 150 -65 ... 150 W C mA A
package may be available upon special request
Thermal Resistance Parameter Junction - soldering point1) Symbol
RthJS
Value
10
Unit K/W
2
2009-05-28
BDP947, BDP949, BDP953
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BDP947 IC = 10 mA, IB = 0 , BDP949 IC = 10 mA, IB = 0 , BDP953 V(BR)CEO
Symbol min.
Values typ. max.
Unit
V 45 60 100 A 0.1 20 100 nA 25 100 50 15 475 0.5 1.3 V
Collector-base breakdown voltage
IC = 100 A, IE = 0 , BDP947 IC = 100 A, IE = 0 , BDP949 IC = 0 , IE = 100 A, BDP953
V(BR)CBO
45 60 120
V(BR)EBO I CBO
Emitter-base breakdown voltage
IE = 10 A, IC = 0
5
Collector-base cutoff current
VCB = 45 V, IE = 0 VCB = 45 V, IE = 0 , TA = 150 C
Emitter-base cutoff current
VEB = 4 V, IC = 0
I EBO h FE
-
DC current gain2)
IC = 10 mA, VCE = 5 V IC = 500 mA, V CE = 1 V IC = 2 A, VCE = 2 V, BDP947, BDP949 IC = 2 A, VCE = 2 V, BDP953
Collector-emitter saturation voltage2)
IC = 2 A, IB = 0.2 A
VCEsat VBEsat
-
Base emitter saturation voltage2)
IC = 2 A, IB = 0.2 A
AC Characteristics Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz fT Ccb
-
100 25
-
MHz pF
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1For
calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300s; D < 2%
2Pulse
3
2009-05-28
BDP947, BDP949, BDP953
DC current gain hFE = (IC)
VCE = 2 V
10 3
100C
Collector-emitter saturation voltage
IC = (VCEsat), hFE = 10
10 4
mA
-
25C
10 3
10 2
-55C
hFE
IC
10 2
100C 25C -50C
10 1 10 1
10 0 0 10
10
1
10
2
10
3
mA 10
4
10 0 0
0.1
0.2
0.3
0.4
V
0.6
IC
VCEsat
Base-emitter saturation voltage
IC = (V BEsat), hFE = 10
10 4
mA
Collector current I C = (VBE) VCE = 2 V
10 4
mA
10 3
10 3
-50C 25C 100C
10 2
-50C 25C 100C
10 2
IC
10 1
IC
10 1 10 0 0
10 0 0
0.2
0.4
0.6
0.8
1
V
1.3
0.2
0.4
0.6
0.8
1
V
1.3
VBEsat
VBE
4
2009-05-28
BDP947, BDP949, BDP953
Collector cutoff current ICBO = (TA)
VCB = 45 V
10 5 nA 10 4
Collector-base capacitance Ccb = (V CB) Emitter-base capacitance Ceb = (VEB)
500
pF
CCB(C EB)
400 350 300 250 200
CEB
I CB0
10 3
max
10 2
10 1
typ
150 100 50
10 0
10 -1 0
CCB
20
40
60
80
100
120 C
150
0 0
4
8
12
16
V
22
TA
VCB(VEB)
Total power dissipation Ptot = (TS)
Permissible Pulse Load RthJS = (t p)
5.5
W
10 2
4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 15 30 45 60 75 90 105 120 C 150 10 -1 -6 10 10
-5
RthJS
Pto t
10 1
10 0
D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0
10
-4
10
-3
10
-2
s
10
0
ts
tp
5
2009-05-28
BDP947, BDP949, BDP953
Permissible Pulse Load
Ptotmax/P totDC = (tp)
10 3
P totmax/P totDC
-
10 2
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
6
2009-05-28
Package SOT223
BDP947, BDP949, BDP953
Package Outline
A
6.5 0.2 3 0.1
4
1.60.1 0.1 MAX.
15 MAX.
B
3.5 0.2
1
2
3
7 0.3
0.7 0.1 4.6 0.25 M A
2.3
0.5 MIN.
0.28 0.04
0...10
Foot Print
0.25 M B
3.5
1.4
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW Date code (YYWW) BCP52-16 Type code
Pin 1
Packing
Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel
1.4
4.8
8
0.3 MAX.
7.55 12
Pin 1
6.8
1.75
7
2009-05-28
BDP947, BDP949, BDP953
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
8
2009-05-28

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